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17 Questions around this concept.
For a semiconductor if the temperature is increased the number of currents carries:
At temperature T, the radiated power by a body is P watts. At temperature 2T, the power radiated by it will be:
A sphere, a cube and a thin circular plate all of same material and same mass initially heated to same high temperature are allowed to cool down under similar conditions. Then the
or emissive power of the black body is directly proportional to the fourth power of its absolute temperature ($\theta$).
i.e $E \propto \theta^4$
$
\Rightarrow E=\sigma \theta^4
$
where
$\sigma=$ Stefan's constant
and its value is
$
\sigma=5.67 \times 10^{-8} W / m^2 K^4
$
- For ordinary body
1. Emissive power is given by $e=\epsilon E$
So according to Stefan Boltzmann law
$
e=\epsilon E=\epsilon \sigma \theta^4
$
where $\epsilon=$ represents emissivity of the material
2. Radiant energy-
If Q is the total energy radiated by the ordinary body then
$
e=\frac{Q}{A \times t}=\epsilon \sigma \theta^4 \Rightarrow Q=A \epsilon \sigma \theta^4 t
$
3. Radiant power ( P ): It is defined as the energy radiated per unit area.
$
P=\frac{Q}{t}=A \epsilon \sigma \theta^4
$
4. If an ordinary body at temperature $\theta$ is surrounded by a body at a temperature $\theta_0$
Then according to Stefan Boltzmann law
$e=\epsilon \sigma\left(\theta^4-\theta_0^4\right)$
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