18 Questions around this concept.
For a semiconductor if the temperature is increased the number of currents carries:
At temperature T, the radiated power by a body is P watts. At temperature 2T, the power radiated by it will be:
A sphere, a cube and a thin circular plate all of same material and same mass initially heated to same high temperature are allowed to cool down under similar conditions. Then the
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or emissive power of the black body is directly proportional to the fourth power of its absolute temperature ($\theta$).
i.e $E \propto \theta^4$
$
\Rightarrow E=\sigma \theta^4
$
where
$\sigma=$ Stefan's constant
and its value is
$
\sigma=5.67 \times 10^{-8} W / m^2 K^4
$
- For ordinary body
1. Emissive power is given by $e=\epsilon E$
So according to Stefan Boltzmann law
$
e=\epsilon E=\epsilon \sigma \theta^4
$
where $\epsilon=$ represents emissivity of the material
2. Radiant energy-
If Q is the total energy radiated by the ordinary body then
$
e=\frac{Q}{A \times t}=\epsilon \sigma \theta^4 \Rightarrow Q=A \epsilon \sigma \theta^4 t
$
3. Radiant power ( P ): It is defined as the energy radiated per unit area.
$
P=\frac{Q}{t}=A \epsilon \sigma \theta^4
$
4. If an ordinary body at temperature $\theta$ is surrounded by a body at a temperature $\theta_0$
Then according to Stefan Boltzmann law
$e=\epsilon \sigma\left(\theta^4-\theta_0^4\right)$
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